Atomic Layer Deposition Equipment
Atomic Layer Deposition (ALD) is an advanced thin-film deposition technology based on self-limiting surface reactions, which enables atomic-scale thickness control, exceptional film uniformity, and perfect 3D conformality. This technology is particularly suitable for the preparation of high-performance nanoscale coatings for lithium batteries, semiconductors, and photovoltaics.
Through ALD technology, gaseous precursors (such as metalorganic compounds/H₂O/O₃) are pulsed alternately into the reaction chamber. Each precursor undergoes a self-limiting chemical reaction with the substrate surface, resulting in the growth of a single atomic layer per cycle (~0.1 nm/cycle) and enabling sub-nanometer thickness control.
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High Coverage100% step coverage (for high aspect-ratio structures). -
Significant EffectFilm thickness shows linear dependence on cycle number. -
Low-temperature ProcessCompatible with low-temperature process (350℃). -
Special FunctionsFunctional materials such as Al₂O₃, LiPON, TiO₂, HfO₂, and ZnO can be deposited.
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Electronics & Semiconduc-tor IndustryHigh-k Oxides (HfO₂, Al₂O₃); Metal Nitrides (TiN, TaN); Noble Metals (Ru, Ir)
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New Energy IndustryMetal Oxides (Al₂O₃, TiO₂, ZrO₂); Lithium Compounds (Li₃PO₄, LiAlO₂); Fluorides (AlF₃)
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New Materials IndustryFluorides: AlF₃, LiAlF₄ (Battery Protection); Sulfides: MoS₂, WS₂ (2D Materials, Catalysis); Carbon-based Materials: Diamond-like Carbon (DLC), Graphene Composite Films
